The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2010

Filed:

Apr. 28, 2006
Applicants:

Takeshi Shimada, Osaka, JP;

Koichi Terao, Osaka, JP;

Kazuya Toji, Osaka, JP;

Inventors:

Takeshi Shimada, Osaka, JP;

Koichi Terao, Osaka, JP;

Kazuya Toji, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01C 7/02 (2006.01); C04B 35/462 (2006.01); C04B 35/468 (2006.01); C04B 35/475 (2006.01); H01B 1/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor porcelain composition [(BiNa)(BaR)]TiOwith 0<x≦0.2, 0<y≦0.02 and R being selected from the group consisting of La, Dy, Eu, Gd or Y is prepared by separately calcining a composition of (BaR)TiOat a temperature of 900° C. through 1300° C. and calcining a composition of (BiNa)TiOat a temperature of 700° C. through 950° C., and then mixing the two calcined powders and forming and sintering the mixed calcined powder. Similarly, a semiconductor porcelain composition [(BiNa)(Ba][TiM]Owith 0<x≦0.2, 0<z≦0.005 and M being selected from the group consisting of Nb, Ta and Sb is prepared by separately calcining a composition of (BaM)TiOat a temperature of 900° C. through 1300° C. and calcining a composition of (BiNa)TiOat a temperature of 700° C. through 950° C., and then mixing the two calcined powders, and forming and sintering the mixed calcined powders.


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