The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Mar. 18, 2008
Karel Vanheusden, Los Altos, CA (US);
Francesco Lemmi, Sunnyvale, CA (US);
Dmitry Poplavskyy, San Jose, CA (US);
Mason Terry, Redwood City, CA (US);
Malcolm Abbott, Sunnyvale, CA (US);
Karel Vanheusden, Los Altos, CA (US);
Francesco Lemmi, Sunnyvale, CA (US);
Dmitry Poplavskyy, San Jose, CA (US);
Mason Terry, Redwood City, CA (US);
Malcolm Abbott, Sunnyvale, CA (US);
Innovalight, Inc., Sunnyvale, CA (US);
Abstract
A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region.