The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Dec. 15, 2006
Applicants:
Igor Peidous, Fishkill, NY (US);
Rohit Pal, Fishkill, NY (US);
Inventors:
Igor Peidous, Fishkill, NY (US);
Rohit Pal, Fishkill, NY (US);
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A stress enhanced MOS transistor and methods for its fabrication are provided. A semiconductor-on-insulator structure is provided which includes a semiconductor layer having a first surface. A strain-inducing epitaxial layer is blanket deposited over the first surface, and can then be used to create a source region and a drain region which overlie the first surface.