The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Nov. 14, 2008
Ming-hau Tung, Santa Clara, CA (US);
Brian James Gally, San Rafael, CA (US);
Manish Kothari, Redwood City, CA (US);
Clarence Chui, San Mateo, CA (US);
John Batey, San Francisco, CA (US);
Ming-Hau Tung, Santa Clara, CA (US);
Brian James Gally, San Rafael, CA (US);
Manish Kothari, Redwood City, CA (US);
Clarence Chui, San Mateo, CA (US);
John Batey, San Francisco, CA (US);
Qualcomm MEMS Technologies, Inc., San Diego, CA (US);
Abstract
A method of manufacturing a microelectromechanical device includes forming at least two conductive layers on a substrate. An isolation layer is formed between the two conductive layers. The conductive layers are electrically coupled together and then the isolation layer is removed to form a gap between the conductive layers. The electrical coupling of the layers mitigates or eliminates the effects of electrostatic charge build up on the device during the removal process.