The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Aug. 06, 2007
Jae-hun Jeong, Suwon-si, KR;
Ki-nam Kim, Seoul, KR;
Soon-moon Jung, Seongnam-si, KR;
Hoo-sung Cho, Yongin-si, KR;
Jae-Hun Jeong, Suwon-si, KR;
Ki-Nam Kim, Seoul, KR;
Soon-Moon Jung, Seongnam-si, KR;
Hoo-Sung Cho, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A memory device may include L semiconductor layers, a gate structure on each of the semiconductor layers, N bitlines, and/or a common source line on each of the semiconductor layers. The L semiconductor layers may be stacked, and/or L may be an integer greater than 1. The N bitlines may be on the gate structures and crossing over the gate structures, and/or N may be an integer greater than 1. Each of the common source lines may be connected to each other such that the common source lines have equipotentiality with each other.