The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2010

Filed:

Jan. 02, 2007
Applicants:

Yen-huei Chen, Hsinchu Science Park Hsinchu, TW;

Hung-jen Liao, Hsin-Chu, TW;

Kun-lung Chen, Taipei, TW;

Yung-lung Lin, Taichung, TW;

Dao-ping Wang, Hsinchu, TW;

Inventors:

Yen-Huei Chen, Hsinchu Science Park Hsinchu, TW;

Hung-Jen Liao, Hsin-Chu, TW;

Kun-Lung Chen, Taipei, TW;

Yung-Lung Lin, Taichung, TW;

Dao-Ping Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory includes a plurality of cells arranged in a matrix having a plurality of rows and a plurality of columns, wherein each cell is capable of storing a bit. Each cell is coupled between a first power supply node that receives a power supply voltage and a second power supply node that receives a second voltage. A plurality of word lines are associated with the memory cells and supplied by a third voltage in read or write operation. The third voltage is a suppressed power supply voltage. The second voltage is negative in read operation and positive in write operation.


Find Patent Forward Citations

Loading…