The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2010

Filed:

Jun. 28, 2007
Applicants:

Albert Meeks, Sunnyvale, CA (US);

Xiaoyu Yang, Campbell, CA (US);

Kim Le, San Jose, CA (US);

Inventors:

Albert Meeks, Sunnyvale, CA (US);

Xiaoyu Yang, Campbell, CA (US);

Kim Le, San Jose, CA (US);

Assignee:

SanDisk 3D, LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of making a two terminal nonvolatile memory cell includes forming a first electrode, forming a charge storage medium, forming a resistive element, and forming a second electrode. The charge storage medium and the resistive element are connected in parallel between the first and the second electrodes, and a presence or absence of charge being stored in the charge storage medium affects a resistivity of the resistive element.


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