The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Dec. 08, 2006
Hyeong-won Seo, Yongin-si, KR;
Jae-man Yoon, Seoul, KR;
Kang-yoon Lee, Seongnam-si, KR;
Young-woong Son, Hwaseong-si, KR;
Hyeong-Won Seo, Yongin-si, KR;
Jae-Man Yoon, Seoul, KR;
Kang-Yoon Lee, Seongnam-si, KR;
Young-Woong Son, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A semiconductor device includes an isolation layer disposed in a semiconductor device to define an active region. A gate trench is disposed across the active region and extends to the isolation layer. An insulated gate electrode fills a portion of the gate trench and covers at least one sidewall of the active region. A portion of the gate electrode, that covers at least one sidewall of the active region, extends under a portion of the gate electrode that crosses the active region. An insulating pattern is disposed on the gate electrode.