The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Nov. 29, 2007
Ching-nan Hsiao, Kaohsiung County, TW;
Ying-cheng Chuang, Taoyuan County, TW;
Chung-lin Huang, Tao-Yuan, TW;
Shih-yang Chiu, Taipei, TW;
Ching-Nan Hsiao, Kaohsiung County, TW;
Ying-Cheng Chuang, Taoyuan County, TW;
Chung-Lin Huang, Tao-Yuan, TW;
Shih-Yang Chiu, Taipei, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
A method for fabricating the memory structure includes: providing a substrate having a pad, forming an opening in the pad, forming a first spacer on a sidewall of the opening, filling the opening with a sacrificial layer, removing the first spacer and exposing a portion of the substrate, removing the exposed substrate to define a first trench and a second trench, removing the sacrificial layer to expose a surface of the substrate to function as a channel region, forming a first dielectric layer on a surface of the first trench, a surface of the second trench and a surface of the channel region, filling the first trench and the second trench with a first conductive layer, forming a second dielectric layer on a surface of the first conductive layer and the surface of the channel region, filling the opening with a second conductive layer, and removing the pad.