The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Apr. 14, 2005
Nguyen Xuan Nguyen, Granada Hills, CA (US);
Paul Hashimoto, Los Angeles, CA (US);
Chanh H. Nguyen, Calabasas, CA (US);
Nguyen Xuan Nguyen, Granada Hills, CA (US);
Paul Hashimoto, Los Angeles, CA (US);
Chanh H. Nguyen, Calabasas, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A process for fabricating ohmic contacts in a field-effect transistor includes the steps of: thinning a semiconductor layer forming recessed portions in the semiconductor layer; depositing ohmic contact over the recessed portions; and heating the deposited ohmic contacts. The field-effect transistor comprises a layered semiconductor structure which includes a first group III nitride compound semiconductor layer doped with a charge carrier, and a second group III nitride compound semiconductor layer positioned below the first layer, to generate an electron gas in the structure. After the heating step the ohmic contacts communicate with the electron gas. As a result, an excellent ohmic contact to the channel of the transistor is obtained.