The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Jun. 16, 2006
Sohyun Park, Santa Clara, CA (US);
Wen H. Zhu, Sunnyvale, CA (US);
Tzu-fang Huang, San Jose, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Hichem M'saad, Santa Clara, CA (US);
Sohyun Park, Santa Clara, CA (US);
Wen H. Zhu, Sunnyvale, CA (US);
Tzu-Fang Huang, San Jose, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Hichem M'Saad, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.