The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Jun. 25, 2007
Yaw S. Obeng, Frisco, TX (US);
Murlidhar Bashyam, Richardson, TX (US);
Srinivasa Raghavan, Plano, TX (US);
Yaw S. Obeng, Frisco, TX (US);
Murlidhar Bashyam, Richardson, TX (US);
Srinivasa Raghavan, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for manufacturing a semiconductor device. The method comprises forming a metal layer on a silicon-containing layer located on a semiconductor substrate. The method also comprises reacting a portion of the metal layer with the silicon-containing layer to form a metal silicide layer. The method further comprises removing an unreacted portion of the metal layer on the metal silicide layer by a removal process. The removal process includes delivering a flow of an acidic solution to a surface of the unreacted portion of the metal layer, wherein the acidic solution delivered to the surface is substantially gas-free.