The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Jan. 15, 2008
Takuya Futase, Tokyo, JP;
Keiichiro Kashihara, Tokyo, JP;
Shigenari Okada, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The performance of the semiconductor device which formed the metal silicide layer in the salicide process is improved. An element isolation region is formed in a semiconductor substrate by the STI method, a gate insulating film is formed, a gate electrode is formed, ntype semiconductor region and ptype semiconductor region for source/drains are formed, a metallic film is formed on a semiconductor substrate, and a barrier film is formed on a metallic film. And after forming the metal silicide layer to which a metallic film, and a gate electrode, ntype semiconductor region and ptype semiconductor region are made to react by performing first heat treatment, a barrier film, and an unreacted metallic film are removed, and the metal silicide layer is left. An element isolation region makes compressive stress act on a semiconductor substrate. A barrier film is a film which makes a semiconductor substrate generate tensile stress, and the metal silicide layer which consists of mono-silicide MSi of metallic element M which forms a metallic film is formed in the first heat treatment.