The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Jun. 16, 2005
Kensuke Okonogi, Tokyo, JP;
Kiyonori Ohyu, Tokyo, JP;
Kazutaka Manabe, Tokyo, JP;
Satoru Yamada, Tokyo, JP;
Takuo Ohashi, Tokyo, JP;
Kensuke Okonogi, Tokyo, JP;
Kiyonori Ohyu, Tokyo, JP;
Kazutaka Manabe, Tokyo, JP;
Satoru Yamada, Tokyo, JP;
Takuo Ohashi, Tokyo, JP;
Elpida Memory, Inc., Chuo-ku, Tokyo, JP;
Abstract
A method for manufacturing a DRAM device on a silicon substrate includes: forming cell transistors in a memory cell area and other transistors in a peripheral circuit area; forming polysilicon plugs connected to diffused regions of the cell transistors and metallic plugs connected to diffused regions of the other transistors; heat treating at a temperature of 980 to 1,020 degrees C.; heat treating at a temperature of 700 to 850 degrees C.; implanting fluorine or boron fluoride into the diffused regions of the other transistors; and heat treating at a temperature of 500 to 850 degrees C.