The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
May. 12, 2008
Shinan Wang, Kashiwa, JP;
Kenji Tamamori, Ebina, JP;
Taiko Motoi, Atsugi, JP;
Masahiko Okunuki, Akiruno, JP;
Haruhito Ono, Minamiashigara, JP;
Toshiaki Aiba, Fujisawa, JP;
Shinan Wang, Kashiwa, JP;
Kenji Tamamori, Ebina, JP;
Taiko Motoi, Atsugi, JP;
Masahiko Okunuki, Akiruno, JP;
Haruhito Ono, Minamiashigara, JP;
Toshiaki Aiba, Fujisawa, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.