The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7700257 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 20, 2010

Filed:

Mar. 24, 2004
Applicants:

Toshiyuki Ogata, Kawasaki, JP;

Kotaro Endo, Kawasaki, JP;

Hiromitsu Tsuji, Kawasaki, JP;

Masaaki Yoshida, Kawasaki, JP;

Inventors:

Toshiyuki Ogata, Kawasaki, JP;

Kotaro Endo, Kawasaki, JP;

Hiromitsu Tsuji, Kawasaki, JP;

Masaaki Yoshida, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photoresist composition containing a polymer (A) containing an alkali-soluble constituent unit (a1) containing an alicyclic group having both a fluorine atom or a fluorinated alkyl group (i) and an alcoholic hydroxyl group (ii), whose alkali-solubility is changeable by an action of an acid; an acid generator (B) which generates an acid by light irradiation; and a dissolution inhibitor (C) having a fluorine atom(s) and/or a nitrogen-containing compound (D) selected from a tertiary amine (d1) having a polar group, a tertiary alkylamine (d2) having 7 or more and 15 or less of carbon atoms or an ammonium salt (d3). The composition has a resist property capable of accomplishing line and space (1:1) of 90 nm or less in good shape as a pattern processing accuracy of a semiconductor integrated circuit by lithography.


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