The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2010

Filed:

Sep. 24, 2004
Applicants:

Hiroya Kobayashi, Hamamatsu, JP;

Masaharu Muramatsu, Hamamatsu, JP;

Inventors:

Hiroya Kobayashi, Hamamatsu, JP;

Masaharu Muramatsu, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/058 (2006.01);
U.S. Cl.
CPC ...
Abstract

With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting unit to be maintained. A semiconductor devicehas a semiconductor substrate, a wiring substrate, conductive bumps, and a resin. A CCDand a thinned portionare formed on semiconductor substrate. Electrodesof semiconductor substrateare connected via conductive bumpsto electrodesof wiring substrate. Insulating resinfills a gap between outer edgeof thinned portionand wiring substrateto reinforce the bonding strengths of conductive bumps. This resinis a resin sheet that has been formed in advance so as to surround a periphery of a gap between thinned portionand wiring substrateexcept for portions of the periphery.


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