The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Mar. 28, 2007
Applicant:
Noriaki Mikasa, Tokyo, JP;
Inventor:
Noriaki Mikasa, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/772 (2006.01);
U.S. Cl.
CPC ...
Abstract
According to the present invention, it is possible to isolate elements from each other without formation of STI and integrate the elements at a high density. A step is formed on a surface of a silicon substrate so as to provide different surfaces. Transistors are formed on the respective different surfaces. The transistors are insulated from each other by a silicon layer and an insulating sidewall. Since no STI is formed between the transistors, it is possible to integrate the transistors at a high density.
Mikasa, Noriaki. (2010). Semiconductor device that includes transistors formed on different silicon surfaces (U.S. Patent No. 7696576). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7696576
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile