The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2010

Filed:

Sep. 19, 2007
Applicants:

Hiroyuki Fujimoto, Tokyo, JP;

Yasuhiko Ueda, Tokyo, JP;

Inventors:

Hiroyuki Fujimoto, Tokyo, JP;

Yasuhiko Ueda, Tokyo, JP;

Assignee:

Elpida Memory, Inc., Chuo-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a trench provided in a semiconductor substrate, a gate electrode formed in the trench through a gate dielectric film, and a diffusion layer formed in the vicinity of the trench. The trench includes an opening portion provided in a surface of the semiconductor substrate, a recess curved surface portion including a cross-sectional contour having a substantially circular arc shape, and a connection curved surface portion connecting the recess curved surface portion and the opening portion. The connection curved surface portion includes a continuous curved surface between the opening portion and the recess curved surface portion.


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