The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Dec. 01, 2006
Yaocheng Liu, Elmsford, NY (US);
Subramanian S. Iyer, Mount Kisco, NY (US);
Jinghong LI, Poughquag, NY (US);
Yaocheng Liu, Elmsford, NY (US);
Subramanian S. Iyer, Mount Kisco, NY (US);
Jinghong Li, Poughquag, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Formation of carbon-substituted single crystal silicon layer is prone to generation of large number of defects especially at high carbon concentration. The present invention provides structures and methods for providing low defect carbon-substituted single crystal silicon layer even for high concentration of carbon in the silicon. According to the present invention, the active retrograde profile in the carbon implantation reduces the defect density in the carbon-substituted single crystal silicon layer obtained after a solid phase epitaxy. This enables the formation of semiconductor structures with compressive stress and low defect density. When applied to semiconductor transistors, the present invention enables N-type field effect transistors with enhanced electron mobility through the tensile stress that is present into the channel.