The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Oct. 16, 2007
Timothy Wayne Kemerer, Essex Junction, VT (US);
Robert Mark Rassel, Colchester, VT (US);
Steven M. Shank, Jericho, VT (US);
Francis Roger White, Essex, VT (US);
Timothy Wayne Kemerer, Essex Junction, VT (US);
Robert Mark Rassel, Colchester, VT (US);
Steven M. Shank, Jericho, VT (US);
Francis Roger White, Essex, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A trench capacitor, method of forming a trench capacitor and a design structure for a trench capacitor. The trench capacitor including: a trench in a single-crystal silicon substrate, a conformal dielectric liner on the sidewalls and the bottom of the trench; an electrically conductive polysilicon inner plate filling regions of the trench not filled by the liner; an electrically conductive doped outer plate in the substrate surrounding the sidewalls and the bottom of the trench; a doped silicon region in the substrate; a first electrically conductive metal silicide layer on a surface region of the doped silicon region exposed at the top surface of the substrate; a second electrically conductive metal silicide layer on a surface region of the inner plate exposed at the top surface of the substrate; and an insulating ring on the top surface of the substrate between the first and second metal silicide layers.