The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2010

Filed:

Mar. 31, 2006
Applicants:

Naoki Matsumoto, Nirasaki, JP;

Hideaki Tanaka, Nirasaki, JP;

Hisashi Fujiwara, Nirasaki, JP;

Chishio Koshimizu, Nirasaki, JP;

Fumiaki Koiwa, Miyagi-gun, JP;

Toshiyuki Kobayashi, Miyagi-gun, JP;

Youichi Nakayama, Nirasaki, JP;

Hiroshi Nakamura, Nirasaki, JP;

Inventors:

Naoki Matsumoto, Nirasaki, JP;

Hideaki Tanaka, Nirasaki, JP;

Hisashi Fujiwara, Nirasaki, JP;

Chishio Koshimizu, Nirasaki, JP;

Fumiaki Koiwa, Miyagi-gun, JP;

Toshiyuki Kobayashi, Miyagi-gun, JP;

Youichi Nakayama, Nirasaki, JP;

Hiroshi Nakamura, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. A process gas supply unit is configured to supply a process gas into the process container. An RF power supply is configured to apply an RF power to the first electrode or second electrode to generate plasma of the process gas. A DC power supply is configured to apply a DC voltage to the first electrode or second electrode. A control section is configured to control the RF power supply and the DC power supply such that the DC power supply causes the DC voltage applied therefrom to reach a voltage set value, when or after the RF power supply starts applying the RF power.


Find Patent Forward Citations

Matsumoto, Naoki. (2010). Capacitive coupling plasma processing apparatus and method (U.S. Patent No. 7692916). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7692916

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…