The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Jan. 19, 2006
Isamu Asano, Tokyo, JP;
Natsuki Sato, Tokyo, JP;
Wolodymyr Czubatyj, Rochester Hills, MI (US);
Jeffrey P. Fournier, Rochester Hills, MI (US);
Isamu Asano, Tokyo, JP;
Natsuki Sato, Tokyo, JP;
Wolodymyr Czubatyj, Rochester Hills, MI (US);
Jeffrey P. Fournier, Rochester Hills, MI (US);
Elpida Memory, Inc., Tokyo, JP;
Abstract
A non-volatile memory element comprises a bottom electrode; a top electrode; and a recording layercontaining phase change material and a block layerthat can block phase change of the recording layer, provided between the bottom electrodeand the top electrode. The block layeris constituted of material having an electrical resistance that is higher than that of material constituting the recording layer. The block layersuppresses the radiation of heat towards the top electrodeand greatly limits the phase change region when a write current is applied. The result is a high heating efficiency. The top electrodeitself can be used to constitute a bit line, or a separate bit line can be provided.