The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Jan. 19, 2007
In-sang Jeon, Seoul, KR;
Sang-bom Kang, Seoul, KR;
Dong-chan Kim, Anyang-si, KR;
Chul-sung Kim, Seongnam-si, KR;
Sug-hun Hong, Yongin-si, KR;
Sang-jin Hyun, Suwon-si, KR;
In-Sang Jeon, Seoul, KR;
Sang-Bom Kang, Seoul, KR;
Dong-Chan Kim, Anyang-si, KR;
Chul-Sung Kim, Seongnam-si, KR;
Sug-Hun Hong, Yongin-si, KR;
Sang-Jin Hyun, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
The memory device includes a first tunnel insulation layer pattern on a semiconductor substrate, a second tunnel insulation layer pattern having an energy band gap lower than that of the first tunnel insulation layer pattern on the first tunnel insulation layer pattern, a charge trapping layer pattern on the second tunnel insulation layer pattern, a blocking layer pattern on the charge trapping layer pattern, and a gate electrode on the blocking layer pattern. The memory device further includes a source/drain region at an upper portion of the semiconductor substrate. The upper portion of the semiconductor substrate is adjacent to the first tunnel insulation layer pattern.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile