The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Dec. 16, 2005
Karl B. Levy, Los Altos, CA (US);
Junghwan Sung, Los Altos, CA (US);
Kaihan A. Ashtiani, Sunnyvale, CA (US);
James A. Fair, Mountain View, CA (US);
Joshua Collins, Sunnyvale, CA (US);
Juwen Gao, San Jose, CA (US);
Karl B. Levy, Los Altos, CA (US);
Junghwan Sung, Los Altos, CA (US);
Kaihan A. Ashtiani, Sunnyvale, CA (US);
James A. Fair, Mountain View, CA (US);
Joshua Collins, Sunnyvale, CA (US);
Juwen Gao, San Jose, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.