The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Oct. 29, 2007
Toshiharu Furukawa, Essex Junction, VT (US);
Mark Charles Hakey, Fairfax, VT (US);
Steven John Holmes, Guilderland, NY (US);
David Vaclav Horak, Essex Junction, VT (US);
Charles William Koburger, Iii, Delmar, NY (US);
Peter H. Mitchell, Jericho, VT (US);
Larry Alan Nesbit, Williston, VT (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Mark Charles Hakey, Fairfax, VT (US);
Steven John Holmes, Guilderland, NY (US);
David Vaclav Horak, Essex Junction, VT (US);
Charles William Koburger, III, Delmar, NY (US);
Peter H. Mitchell, Jericho, VT (US);
Larry Alan Nesbit, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Vertical device structures incorporating at least one nanotube and methods for fabricating such device structures by chemical vapor deposition. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad and encased in a coating of a dielectric material. Vertical field effect transistors may be fashioned by forming a gate electrode about the encased nanotubes such that the encased nanotubes extend vertically through the thickness of the gate electrode. Capacitors may be fashioned in which the encased nanotubes and the corresponding catalyst pad bearing the encased nanotubes forms one capacitor plate.