The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Jan. 31, 2008
Zachary Matthew Stum, Niskayuna, NY (US);
Kevin Sean Matocha, Rexford, NY (US);
Jody Alan Fronheiser, Selkirk, NY (US);
Ljubisa Dragoljub Stevanovic, Clifton Park, NY (US);
Zachary Matthew Stum, Niskayuna, NY (US);
Kevin Sean Matocha, Rexford, NY (US);
Jody Alan Fronheiser, Selkirk, NY (US);
Ljubisa Dragoljub Stevanovic, Clifton Park, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
A method of forming a vertical MOSFET device includes forming a first trench within a semiconductor layer of a first polarity, the first trench generally defining a well region of a second polarity opposite the first polarity; growing a first epitaxial well layer of the second polarity over the original semiconductor layer; growing a second epitaxial source contact layer of the first polarity over the well layer; forming a second trench through the source contact layer and at least a portion of the well layer; growing a third epitaxial layer of the second polarity over the source contact layer; and planarizing at least the first and second epitaxial layers so as to expose an upper surface of the original semiconductor layer, wherein a top surface of the third epitaxial layer is substantially coplanar with a top surface of the source contact layer prior to ohmic contact formation.