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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7687885 B1

PDFFull Text
Date of Patent:
Mar. 30, 2010

Filed:

May. 30, 2007

Semiconductor device with reduced parasitic inductance

Applicants:

Takayuki Hashimoto, Tokai, JP;

Noboru Akiyama, Hitachinaka, JP;

Masaki Shiraishi, Hitachinaka, JP;

Tetsuya Kawashima, Hitachi, JP;

Inventors:

Takayuki Hashimoto, Tokai, JP;

Noboru Akiyama, Hitachinaka, JP;

Masaki Shiraishi, Hitachinaka, JP;

Tetsuya Kawashima, Hitachi, JP;

Assignee:

Renesas Technology Corp., Tokyo, JP;

Attorney:

Townsend and Townsend and Crew LLP

Primary Examiner:

Alexander O Williams

Int. Cl.
CPC ...
H01L 31/111 (2006.01); G05F 1/10 (2006.01); H02J 3/12 (2006.01); H01L 25/04 (2006.01); H01L 25/18 (2006.01); G06F 1/26 (2006.01); H02M 3/155 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a technology for reducing the parasitic inductance of the main circuit of a power source unit. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETS, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are electrically connected via the same die pad.

Find Patent Forward Citations

Hashimoto, Takayuki. (2010). Semiconductor device with reduced parasitic inductance (U.S. Patent No. 7687885). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7687885

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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