The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2010

Filed:

Sep. 04, 2007
Applicants:

Cha-won Koh, Yongin-si, KR;

Jeong-lim Nam, Yongin-si, KR;

Gi-sung Yeo, Seoul, KR;

Sang-jin Kim, Suwon-si, KR;

Sung-gon Jung, Seoul, KR;

Inventors:

Cha-won Koh, Yongin-si, KR;

Jeong-lim Nam, Yongin-si, KR;

Gi-sung Yeo, Seoul, KR;

Sang-jin Kim, Suwon-si, KR;

Sung-gon Jung, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming fine metal interconnect patterns includes forming an insulating film on a substrate, forming a plurality of mold patterns with first spaces therebetween on the insulating film, such that the mold patterns have a first layout, forming metal hardmask patterns in the first spaces by a damascene process, removing the mold patterns, etching the insulating film through the metal hardmask patterns to form insulating film patterns with second spaces therebetween, the second spaces having the first layout, and forming metal interconnect patterns having the first layout in the second spaces by the damascene process.


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