The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Feb. 29, 2008
Paul A. Grudowski, Austin, TX (US);
Veeraraghavan Dhandapani, Round Rock, TX (US);
Stefan Zollner, Hopewell Junction, NY (US);
Paul A. Grudowski, Austin, TX (US);
Veeraraghavan Dhandapani, Round Rock, TX (US);
Stefan Zollner, Hopewell Junction, NY (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
In a semiconductor fabrication process, an epitaxial layer is formed overlying a substrate, wherein there is a lattice mismatch between the epitaxial layer and the substrate. A hard mask having an opening is formed overlying the epitaxial layer. A recess is formed through the epitaxial layer and into the substrate. The recess is substantially aligned to the opening in the hard mask. A channel region of a semiconductor device is formed in the recess.