The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Oct. 02, 2007
Shih Tzung Su, Shulin, TW;
Jun Zeng, Torrance, CA (US);
Poi Sun, Torrance, CA (US);
Kao Way Tu, Jhonghe, TW;
Tai Chiang Chen, TianJin, CN;
Long LV, TianJin, CN;
Xin Wang, TianJin, CN;
Shih Tzung Su, Shulin, TW;
Jun Zeng, Torrance, CA (US);
Poi Sun, Torrance, CA (US);
Kao Way Tu, Jhonghe, TW;
Tai Chiang Chen, TianJin, CN;
Long Lv, TianJin, CN;
Xin Wang, TianJin, CN;
Abstract
In accordance with the invention, a trench MOSFET semiconductor device is manufactured in accordance with a process comprising the steps of: providing a heavily doped N+ silicon substrate; utilizing a first mask to define openings for the trench gate and termination; utilizing a second mask as a source mask with openings determining the size and shape of a diffused source junction depth; utilizing a third mask as a contact mask to define contact hole openings; and utilizing a fourth mask as a metal mask, whereby only the first, second, third and fourth masks are utilized in the manufacture of the trench MOSFET semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile