The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Mar. 12, 2007
Srikanth B. Samavedam, Austin, TX (US);
David C. Gilmer, Austin, TX (US);
Mark V. Raymond, Austin, TX (US);
James K. Schaeffer, Austin, TX (US);
Srikanth B. Samavedam, Austin, TX (US);
David C. Gilmer, Austin, TX (US);
Mark V. Raymond, Austin, TX (US);
James K. Schaeffer, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor device structure is formed over a semiconductor substrate and has a gate dielectric over the semiconductor substrate and a gate over the gate dielectric. The gate, at an interface with the gate dielectric, comprises a transition metal, carbon, and an electropositive element. The transition metal comprises one of group consisting of tantalum, titanium, hafnium, zirconium, molybdenum, and tungsten. The electropositive element comprises one of a group consisting of a Group IIA element, a Group IIIB element, and lanthanide series element.