The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Mar. 17, 2006
Yi-chou Chen, Hsinchu, TW;
Hsiang-lan Lung, Hsinchu, TW;
Ruichen Liu, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A memory cell structure includes a substrate having a bottom electrode at least partially disposed within the substrate; a pad disposed at least partially over the substrate; a phase change element having a chalcogenide material, disposed at least partially over the substrate and adjacent to the pad, the phase change element being adjacent and operatively coupled to the bottom electrode; and a top electrode operatively coupled to the phase change element. Moreover, the pad is formed by a method including depositing a first material layer over the substrate, etching the first material layer to form a pad strip and to expose the bottom electrode, and etching the pad strip to from the pad.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile