The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
May. 23, 2008
Applicant:
Cheng-hui Shen, Hukou Township, Hsinchu County, TW;
Inventor:
Cheng-Hui Shen, Hukou Township, Hsinchu County, TW;
Assignee:
Advanced Ion Beam Technology, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/08 (2006.01); H01L 21/265 (2006.01); G21K 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An ion implantation method is provided. The method, before ion implanting, is to rotate the substrate by an angle and shift the scan path of the ion beam with an interlace pitch in the direction perpendicular to the scan direction and on the plane of the substrate. Therefore a plurality of interlaced and not overlapped ion implantation scan lines are formed on the surface of the substrate, so the method can enhance the uniformity of the dose of the ion implantation in the substrate.