The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Jun. 29, 2006
Applicants:
Qian Fu, Fremont, CA (US);
Shenjian Liu, Fremont, CA (US);
Linda Fung-ming Lee, Fremont, CA (US);
Inventors:
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming devices is provided. A phase change layer is provided. The phase change layer is etched by providing an etch gas comprising a bromine containing compound and forming a plasma from the etch gas. The phase change layer is of a material that may be heated by a current and then when cooled, either forms an amorphous material or a crystalline material, depending on how fast the material is cooled. In addition, the amorphous material has a resistance at least several times greater than the crystalline material.