The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7682479 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 23, 2010

Filed:

Jul. 30, 2007
Applicants:

Zhi-song Huang, Fremont, CA (US);

S. M. Reza Sadjadi, Saratoga, CA (US);

Inventors:

Zhi-Song Huang, Fremont, CA (US);

S. M. Reza Sadjadi, Saratoga, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); H01L 21/306 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming fin structures is provided. Sacrificial structures are provided on a substrate. Fin structures are formed on the sides of the sacrificial structures. The forming of the fin structures comprises a plurality of cycles, wherein each cycle comprises a fin deposition phase and a fin profile shaping phase. The sacrificial structure is removed.


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Huang, Zhi-Song. (2010). Fin structure formation (U.S. Patent No. 7682479). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7682479

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