The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
May. 02, 2006
Naohiro Suzuki, Anjo, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Naohiro Suzuki, Anjo, JP;
Hitoshi Yamaguchi, Nisshin, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes: a MOS transistor; a protection diode; and a semiconductor substrate. The MOS transistor and the protection diode are disposed in the semiconductor substrate. The drain of the MOS transistor is connected to the cathode of the protection diode. The source of the MOS transistor is connected to the anode of the protection diode. The MOS transistor has a withstand voltage defined as V. The protection diode has a withstand voltage defined as V, a parasitic resistance defined as R, and a maximum current defined as I. They satisfy a relationship of V>V+I×R. The maximum current of Iis equal to or larger than 45 Amperes.