The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Aug. 30, 2000
Ritsuko Kawasaki, Kanagawa, JP;
Kenji Kasahara, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-Ken, JP;
Abstract
A laser annealing method for obtaining a crystalline semiconductor film having a large grain size, and a method of manufacturing a semiconductor device using the crystalline semiconductor film, are provided. Using a shape change (convex portion or concave portion) of an amorphous semiconductor film when crystallizing the amorphous semiconductor film using irradiation of laser light, it is possible to intentionally regulate the origin of crystal growth, and to make the grain size large. By then designing the arrangement of an active layer (island shape semiconductor film) so as to contain at least a channel forming region within one grain, it becomes possible to improve the electrical characteristics of a TFT.