The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Dec. 21, 2007
Applicants:
Hemant P. Mungekar, Campbell, CA (US);
Jing Wu, San Jose, CA (US);
Young S. Lee, San Jose, CA (US);
Anchuan Wang, San Jose, CA (US);
Inventors:
Hemant P. Mungekar, Campbell, CA (US);
Jing Wu, San Jose, CA (US);
Young S. Lee, San Jose, CA (US);
Anchuan Wang, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 14/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.
Published as:
US2009163041A1; WO2009085974A2; WO2009085974A3; TW200943419A; US7678715B2; KR20100108398A; EP2238277A2; CN101981225A; JP2011508434A; TWI359459B; EP2238277A4; JP5269093B2;