The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Jul. 24, 2007
Brian LU, Fremont, CA (US);
Wai-fan Yau, Los Altos, CA (US);
Collin Mui, Mountain View, CA (US);
Bunsen Nie, Fremont, CA (US);
Raihan Tarafdar, San Jose, CA (US);
Brian Lu, Fremont, CA (US);
Wai-Fan Yau, Los Altos, CA (US);
Collin Mui, Mountain View, CA (US);
Bunsen Nie, Fremont, CA (US);
Raihan Tarafdar, San Jose, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A deposition method modulates the reaction rate and thickness of highly conformal dielectric films deposited by forming a saturated catalytic layer on the surface and then exposing the surface to silicon-containing precursor gas and a reaction modulator, which may accelerate or quench the reaction. The modulator may be added before, after, or during exposure of the silicon-containing precursor gas. The film thickness after one cycle of deposition may be increased up to 20 times or decreased up to 20 times.