The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Feb. 16, 2009
Kyoung Bong Rouh, Goyang-si, KR;
Seung Woo Jin, Icheon-si, KR;
Min Yong Lee, Seoul, KR;
Yong Soo Jung, Seoul, KR;
Kyoung Bong Rouh, Goyang-si, KR;
Seung Woo Jin, Icheon-si, KR;
Min Yong Lee, Seoul, KR;
Yong Soo Jung, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gate electrodes formed on the gate insulating film so that the gate electrodes fill the inverse triangular recesses and protrude from the surface of the semiconductor substrate; and first and second junction regions formed in the semiconductor substrate and opposed to each other so that the corresponding one of the gate electrodes is interposed therebetween.