The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Dec. 09, 2008
Applicant:
Kazuyoshi Shiba, Tokyo, JP;
Inventor:
Kazuyoshi Shiba, Tokyo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
To provide a nonvolatile memory having an excellent data holding property and a technique for manufacturing the memory, a polycrystalline silicon filmand an insulating filmare sequentially stacked on a gate insulating film, then the polycrystalline silicon filmand the insulating filmare patterned to form gate electrodesA,B, and then sidewall spacersincluding a silicon oxide film are formed on sidewalls of the gate electrodesA,B. After that, a silicon nitride filmis deposited on a substrateby a plasma enhanced CVD process so that the gate electrodesA,B are not directly contacted to the silicon nitride film