The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Feb. 13, 2008
Laurent Clavelier, Grenoble, FR;
Frederic Mayer, Grenoble, FR;
Maud Vinet, Rives, FR;
Simon Deleonibus, Claix, FR;
Laurent Clavelier, Grenoble, FR;
Frederic Mayer, Grenoble, FR;
Maud Vinet, Rives, FR;
Simon Deleonibus, Claix, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
Method of producing a transistor, comprising in particular the steps of: producing a first etching mask on a gate layer, one edge of the first mask forming a pattern of the first edge of a gate of the transistor, etching the gate layer according to the first etching mask, first ion implantation in a part of the substrate not covered by the gate layer, trimming the first etching mask over a length equal to a gate length of the transistor, producing a second etching mask on the gate layer, removing the first etching mask etching the gate layer according to the second etching mask, second ion implantation in another part of the substrate.