The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Dec. 22, 2006
Chang Eun Lee, Seoul, KR;
Chang Eun Lee, Seoul, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A CMOS image sensor and a method for manufacturing the same are provided. The method includes: preparing a semiconductor substrate in which a device isolation region and an active region are defined; forming a gate pattern including a gate oxide layer and a gate electrode on the semiconductor substrate; implanting n-type impurity ions in a predetermined part of the active region of the semiconductor substrate to form a photodiode region; forming a spacer at a sidewall of the gate pattern; forming a p-type impurity region at a surface of the photodiode region; forming an epitaxial layer on the semiconductor substrate and the gate pattern except for on the device isolation region and the spacers by performing a selective epitaxial growth; and implanting n+ type ions in a transistor region of the semiconductor substrate below the epitaxial layer to form a source/drain region.