The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Mar. 01, 2007
Yutaka Asou, Ozu-Machi, JP;
Masatoshi Shiraishi, Ozu-Machi, JP;
Yutaka Asou, Ozu-Machi, JP;
Masatoshi Shiraishi, Ozu-Machi, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
The present invention provides a method of processing a substrate, comprising a reflow process for forming a desired pattern by dissolving a resist pattern, whereby occurrence of defectives, such as disconnection, can be prevented, and a pattern having an appropriate uniformity can be formed efficiently on each predetermined area desired to be masked. From a photoresist patternincluding thicker film portions and thinner film portions, the thinner film portions are removed by a re-developing process. Next, the photoresist so formed by the re-developing process on a backing layeris dissolved such that it passes through a stepped portionformed at each edge portionof the backing layer, thereby masking a predetermined area Tg. Upon masking the predetermined area Tg, the photoresistis dissolved in a first dissolving-speed mode on the backing layer, and then after the photoresist to be dissolved reaches the stepped portion, the photoresistis dissolved in a second dissolving-speed mode which is slower than the first dissolving-speed mode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile