The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Dec. 04, 2007
Xinjian Lei, Vista, CA (US);
Hareesh Thridandam, Vista, CA (US);
Manchao Xiao, San Diego, CA (US);
Heather Regina Bowen, Vista, CA (US);
Thomas Richard Gaffney, Carlsbad, CA (US);
Xinjian Lei, Vista, CA (US);
Hareesh Thridandam, Vista, CA (US);
Manchao Xiao, San Diego, CA (US);
Heather Regina Bowen, Vista, CA (US);
Thomas Richard Gaffney, Carlsbad, CA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—Hfragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more HSi—NR(R═SiH, R, Ror R, defined below) groups selected from the group consisting of one or more of: wherein R and Rin the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and Rin formula A also being combinable into a cyclic group, and Rrepresenting a single bond, (CH), a ring, or SiH, and purging away the unreacted silicon-containing source.