The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2010

Filed:

Feb. 09, 2006
Applicants:

Isamu Asano, Tokyo, JP;

Yukio Fuji, Tokyo, JP;

Kiyoshi Nakai, Tokyo, JP;

Tsuyoshi Kawagoe, Tokyo, JP;

Inventors:

Isamu Asano, Tokyo, JP;

Yukio Fuji, Tokyo, JP;

Kiyoshi Nakai, Tokyo, JP;

Tsuyoshi Kawagoe, Tokyo, JP;

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase change memory device, comprising a phase change memory device; a semiconductor substrate; a MOS transistor disposed at each intersection of a plurality of word lines and a plurality of bit lines arranged in a matrix form; a plurality of phase change memory elements for storing data of a plurality of bits, each formed on an upper area opposite to a diffusion layer of the MOS transistor in a phase change layer made of phase change material; a lower electrode structure for electrically connecting each of the plurality of phase change memory elements to the diffusion layer of the MOS transistor.


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