The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Sep. 22, 2006
Rachid Bouchakour, Marseilles, FR;
Virginie Bidal, Aix en Provence, FR;
Philippe Candelier, Saint Mury Monteymond, FR;
Richard Fournel, Lumbin, FR;
Philippe Gendrier, Grenoble, FR;
Romain Laffont, Marseilles, FR;
Pascal Masson, Marseilles, FR;
Jean-michel Mirabel, Cabries, FR;
Arnaud Regnier, Le Tholonet, FR;
Rachid Bouchakour, Marseilles, FR;
Virginie Bidal, Aix en Provence, FR;
Philippe Candelier, Saint Mury Monteymond, FR;
Richard Fournel, Lumbin, FR;
Philippe Gendrier, Grenoble, FR;
Romain Laffont, Marseilles, FR;
Pascal Masson, Marseilles, FR;
Jean-Michel Mirabel, Cabries, FR;
Arnaud Regnier, Le Tholonet, FR;
STMicroelectronics S.A., Montrouge, FR;
STMicroelectronics SAS, Rousset, FR;
France Universite d'Aix-Marseille, Marseille, FR;
Abstract
A non-volatile memory point including a floating gate placed above a semiconductor substrate, the floating gate comprising active portions insulated from the substrate by thin insulating layers, and inactive portions insulated from the substrate by thick insulating layers that do not conduct electrons, the active portions being principally P-type doped, and the inactive portions comprising at least one N-type doped area forming a portion of a PN junction.