The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2010

Filed:

Oct. 05, 2005
Applicants:

Davis Andrew Mcclure, Cary, NC (US);

Alexander Suvorov, Durham, NC (US);

John Adam Edmond, Cary, NC (US);

David Beardsley Slater, Jr., Raleigh, NC (US);

Inventors:

Davis Andrew McClure, Cary, NC (US);

Alexander Suvorov, Durham, NC (US);

John Adam Edmond, Cary, NC (US);

David Beardsley Slater, Jr., Raleigh, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicon carbide structure is disclosed that is suitable for use as a substrate in the manufacture of electronic devices such as light emitting diodes. The structure includes a silicon carbide wafer having a first and second surface and having a predetermined conductivity type and an initial carrier concentration; a region of implanted dopant atoms extending from the first surface into the silicon carbide wafer to a predetermined depth, with the region having a higher carrier concentration than the initial carrier concentration in the remainder of the wafer; and an epitaxial layer on the first surface of the silicon carbide wafer.


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