The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Jun. 07, 2007
Jiong Chen, San Jose, CA (US);
Jiong Chen, San Jose, CA (US);
Advanced Ion Beam Technology, Inc., San Jose, CA (US);
Abstract
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.